850-1064nm Si PIN modules
850-1064nm Si PIN modules
Si PIN modules/ TC-P850-M09
It is 850nm Si PIN photodiode module with pre-amplification circuit that enables weak current signal to be amplified and convert to voltage signal to achieve the conversion process of photon-photoelectric-signal amplification.
Features
- High-speed response
- High sensitivity
Applications
- Laser fuse
Photoelectric parameter（@Ta=22±3℃）
|
Item # |
Package category |
Diameter of photosensitive surface(mm) |
Responsivity |
Rising time (ns) |
Dynamic range （dB）
|
Operating voltage (V)
|
Noise voltage (mV)
|
Notes |
|
λ=850nm，φe=1μW |
λ=850nm | |||||||
|
GD4213Y |
TO-8 |
2 |
110 |
12 |
20 |
±5±0.3 |
12 |
- |
|
GD4251Y |
2 |
130 |
12 |
20 |
±6±0.3 |
40 |
(Angle of incidence: 0°, transmittance of 830nm~910nm ≥90% | |
|
GD4251Y-A |
10×1.5 |
130 |
18 |
20 |
±6±0.3 |
40 |
||
|
GD42121Y |
10×0.95 |
110 |
20 |
20 |
±5±0.1 |
25 |
||
| Notes: The test load of GD4213Y is 50Ω，the rest others are 1MΩ | ||||||||
Si PIN photodiode/ TC-900-P10
It is Si PIN photodiode that operates under reverse bias and provides high sensitivity ranging from UV to NIR. The peak response wavelength is 930nm.
Features
- Frontside illuminated structure
- Low dark current
- High response
- High reliability
Applications
- Optical fiber communication, sensing and ranging
- Optical detection from UV to NIR
- Fast optical-pulse detection
- Controlling systems for industry
Photoelectric parameter（@Ta=25℃）
|
Item # |
Package category |
Diameter of photosensitive surface(mm) |
Spectral response range (nm) |
Peak response wavelength (nm) |
Responsivity(A/W) λ=900nm
|
Rising time
λ=900nm VR=15V RL=50Ω(ns) |
Dark current VR=15V (nA) |
Junction capacitance VR=15V f=1MHz (pF) |
Breakdown voltage （V）
|
|
GT101Ф0.2 |
Coaxial type II、5501、TO-46、 Plug type |
Ф0.2 |
4～1100 |
930
|
0.63 |
4 |
0.1 |
0.8 |
>200 |
|
GT101Ф0.5 |
Ф0.5 |
5 |
0.1 |
1.2 |
|||||
|
GT101Ф1 |
Ф1.0 |
5 |
0.1 |
2.0 |
|||||
|
GT101Ф2 |
TO-5 |
Ф2.0 |
7 |
0.5 |
6.0 |
||||
|
GT101Ф4 |
T0-8 |
Ф4.0 |
10 |
1.0 |
20.0 |
||||
|
GD3251Y |
TO-8 |
Ф6.0 |
20 |
10 |
30 |
||||
|
GT101Ф8 |
T0-8 |
Ф8.0 |
20 |
3.0 |
70.0 |
||||
|
GD3252Y |
T0-8 |
5.8×5.8 |
25 |
10 |
35 |
Si PIN photodiode/ TC-P1064-P11
l It is Si PIN photodiode that operates under reverse bias and provides high sensitivity ranging from UV to NIR. The peak response wavelength is 980nm. Responsivity: 0.3A/W at 1064 nm.
Features
- Frontside illuminated structure
- Low dark current
- High response
- High reliability
Applications
- Optical fiber communication, sensing and ranging
- Optical detection from UV to NIR
- Fast optical-pulse detection
- Controlling systems for industry
Photoelectric parameter（@Ta=25℃）
|
Item # |
Package category |
Diameter of photosensitive surface(mm) |
Spectral response range (nm) |
Peak response wavelength (nm) |
Responsivity(A/W) λ=1064nm
|
Rising time
λ=1064nm VR=40V RL=50Ω(ns) |
Dark current VR=40V (nA) |
Junction capacitance VR=40V f=1MHz (pF) |
Breakdown voltage （V）
|
|
GT102Ф0.2 |
Coaxial type II、5501、TO-46、Plug type |
Ф0.2 |
4～1100 |
980
|
0.3 |
10 |
0.5 |
0.5 |
100 |
|
GT102Ф0.5 |
Ф0.5 |
10 |
1.0 |
0.8 |
|||||
|
GT102Ф1 |
Ф1.0 |
12 |
2.0 |
2.0 |
|||||
|
GT102Ф2 |
TO-5 |
Ф2.0 |
12 |
3.0 |
5.0 |
||||
|
GT102Ф4 |
TO-8 |
Ф4.0 |
20 |
5.0 |
12.0 |
||||
|
GD3310Y |
TO-8 |
Ф8.0 |
30 |
15 |
50 |
||||
|
GD3217Y |
TO-20 |
Ф10.0 |
50 |
20 |
70 |
