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355-1064nm APD

355-1064nm APD

Type: TC-355-D01/ TC-800-D02/ TC-905-D03/ TC-1064-D04/ TC-1064-M05

Short Description:

It is Si avalanche photodiode with large photosensitive surface and enhanced UV with the peak respond wavelength range at 355~1064nm. It provides high sensitivity ranging from UV to NIR.


Product Detail

Product Tags

APD/ Type: TC-355-D01

APD (avalanche photodiode)

Features

  • Frontside illuminated flat chip
  • High-speed response
  • High APD gain

Applications

  • Medical
  • Biology

Photoelectric parameter(@Ta=22±3℃)

Item #

Package category

Diameter of photosensitive surface(mm)

Spectral response range(nm)

Responsivity

λ=355nm

φe=1μm

M=100

 (A/W)

Dark current

M=100

(nA)

Temperature Coefficient

Ta=-40℃~85℃

(V/℃)

 

Total capacitance

M=100

f=1MHz

(pF)

 

Breakdown voltage

IR=10μA

(V)

VR=10V

VR=80V

Typ.

Max.

Min.

Max.

GD5210Y-0-1-TO5

TO-5

1.8

300~1100

0.22

6.75

3

10

0.4

20

80

200

GD5210Y-0-2-TO5

TO-5

3.0

15

50

50

APD/ Type: TC-800-D02

APD (avalanche photodiode) 800nm APD TC-800-D02

Features

  • Frontside illuminated flat chip
  • High-speed response
  • High APD gain
  • Low junction capacitance
  • Low noise

Applications

  • Laser ranging
  • Laser radar
  • Laser warning

Photoelectric parameter(@Ta=22±3℃)

Item #

Package category

Diameter of photosensitive surface(mm)

Spectral response range(nm)

Peak response wavelength

Responsivity

λ=800nm

φe=1μW

M=100

(A/W)

Response time

λ=800nm

RL=50Ω

(ns)

Dark current

M=100

(nA)

Temperature Coefficient

Ta=-40℃~85℃

(V/℃)

 

Total capacitance

M=100

f=1MHz

(pF)

 

Breakdown voltage

IR=10μA

(V)

Typ.

Max.

Min

Max

GD5210Y-1-2-TO46

TO-46

0.23

400~1100

800

55

0.3

0.05

0.2

0.5

1.5

80

160

GD5210Y-1-5-TO46

TO-46

0.50

0.10

0.4

3.0

GD5210Y-1-2-LCC3

LCC3

0.23

0.05

0.2

1.5

GD5210Y-1-5-LCC3

LCC3

0.50

0.10

0.4

3.0

APD/ Type: TC-905-D03

APD-avalanche-photodiode-905nm-APD-TC-905-D03

Features

  • Frontside illuminated flat chip
  • High-speed response
  • High APD gain
  • Low junction capacitance
  • Low noise
  • Array size and photosensitive surface can be customized.

Applications

  • Laser ranging
  • Laser radar
  • Laser warning

Photoelectric parameter(@Ta=22±3℃)

Item #

Package category

Diameter of photosensitive surface(mm)

Spectral response range(nm)

Peak response wavelength

(nm)

Responsivity

λ=905nm

φe=1μW

M=100

(A/W)

Response time

λ=905nm

RL=50Ω

(ns)

Dark current

M=100

(nA)

Temperature Coefficient

Ta=-40℃~85℃

(V/℃)

Total capacitance

M=100

f=1MHz

(pF)

Breakdown voltage

IR=10μA

(V)

Typ.

Max.

Min

Max

GD5210Y-2-2-TO46

TO-46

0.23

400~1100

905

55

0.6

0.2

1.0

0.9

1.0

130

220

GD5210Y-2-5-TO46

TO-46

0.50

0.4

1.0

1.2

GD5210Y-2-8-TO46

TO-46

0.80

0.8

2.0

2.0

GD5210Y-2-2-LCC3

LCC3

0.23

0.2

1.0

1.0

GD5210Y-2-5-LCC3

LCC3

0.50

0.4

1.0

1.2

GD5210Y-2-2-P

Plastic package

0.23

0.2

1.0

1.0

GD5210Y-2-5-P

Plastic package

0.50

0.4

1.0

1.2

Array

PCB

Customized

According to photosensitive surface

According to photosensitive surface

According to photosensitive surface

160

200

APD/ Type: TC-1064-D04

APD-avalanche-photodiode-1064nm-APD-TC-1064-D04

Features

  • Frontside illuminated flat chip
  • High-speed response
  • High APD gain

Applications

  • Laser ranging
  • Laser radar
  • Laser warning

Photoelectric parameter(@Ta=22±3℃)

Item #

Package category

Diameter of photosensitive surface(mm)

Spectral response range(nm)

Peak response wavelength

(nm)

Responsivity(A/W)

Response time

λ=800nm

RL=50Ω

ns)

Dark current

M=100

(nA)

Temperature Coefficient

Ta=-40℃85

V/

 

Total capacitance

M=100

f=1MHz

pF

 

Breakdown voltage

IR=10μA

V

λ=905nm

φe=1μW

M=100

 

λ=1064nm

φe=1μW

M=100

 

Typ.

Max.

Min

Max

GD5210Y-3-500

TO-46

0.5

 

40~1100

980

 

58

36

2

2

20

2.2

1.0

220

580

GD5210Y-3-800

TO-52

0.8

3

4

20

1.5

GD5211Y

3.5

10

20

3.5

350

500

APD Modules/ Type: TC-1064-M05

APD-avalanche-photodiode-1064nm-APD-Modules-TC-1064-M05

Features

  • Frontside illuminated flat chip
  • High-speed response
  • High APD gain

Applications

  • Laser ranging
  • Laser communication
  • Laser warning

Photoelectric parameter(@Ta=22±3℃)

Item #

Package category

Diameter of photosensitive surface(mm)

Spectral response range(nm)

Breakdown voltage

(V)

Responsivity

M=100

λ=1064nm

(kV/W)

 

Rising time

(ns)

Bandwidth

(MHz)

Temperature Coefficient

Ta=-40℃~85℃

(V/℃)

 

Noise equivalent power(pW/√Hz)

 

Concentricity(μm)

Replaced type in other countries

GD6212Y

TO-8

 

0.8

40~1100 350~500

150

8.8

40

2.2

0.15

≤50

C30950

GD6213Y

200

2

175

C30659-1060-R8BH

GD6219Y

3

280

7

50

2.4

0.27

C30659-1060-3A


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